文献
J-GLOBAL ID:202002251514744789
整理番号:20A0201213
単一ZnOナノロッドとGaN基板の間に形成されたナノスケールp-nヘテロ接合の電気的性質【JST・京大機械翻訳】
Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate
著者 (6件):
Tiagulskyi Stanislav
(Institute of Photonics and Electronics of the Czech Academy of Sciences, Chaberska 1014/57, 182 51, Prague, Czech Republic)
,
Yatskiv Roman
(Institute of Photonics and Electronics of the Czech Academy of Sciences, Chaberska 1014/57, 182 51, Prague, Czech Republic)
,
Faitova Hana
(Institute of Photonics and Electronics of the Czech Academy of Sciences, Chaberska 1014/57, 182 51, Prague, Czech Republic)
,
Kucerova Sarka
(Institute of Photonics and Electronics of the Czech Academy of Sciences, Chaberska 1014/57, 182 51, Prague, Czech Republic)
,
Vanis Jan
(Institute of Photonics and Electronics of the Czech Academy of Sciences, Chaberska 1014/57, 182 51, Prague, Czech Republic)
,
Grym Jan
(Institute of Photonics and Electronics of the Czech Academy of Sciences, Chaberska 1014/57, 182 51, Prague, Czech Republic)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
107
ページ:
Null
発行年:
2020年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)