文献
J-GLOBAL ID:202002252898319969
整理番号:20A0130306
p-i-nペロブスカイト太陽電池のための高効率近20%のためのマイクロメータサイズのペロブスカイト粒子を誘導するトリフェニルアミンジベンゾフルベン由来のドーパントを含まない正孔輸送層【JST・京大機械翻訳】
Triphenylamine dibenzofulvene-derived dopant-free hole transporting layer induces micrometer-sized perovskite grains for highly efficient near 20% for p-i-n perovskite solar cells
著者 (6件):
Chen Yung-Chung
(Department of Chemical and Materials Engineering, National Kaohsiung University of Science and Technology, 415 Jiangong Rd., Sanmin District, Kaohsiung City, 80778, Taiwan)
,
Chen Yung-Chung
(Photo-Sensitive Material Advanced Research and Technology Center (Photo-SMART), National Kaohsiung University of Science and Technology, 415 Jiangong Rd., Sanmin District, Kaohsiung City, 80778, Taiwan)
,
Li Yan-Heng
(Department of Chemical and Materials Engineering, National Kaohsiung University of Science and Technology, 415 Jiangong Rd., Sanmin District, Kaohsiung City, 80778, Taiwan)
,
Chung Chung-Lin
(Department of Materials Engineering, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City, 24301, Taiwan)
,
Hsu Hsiang-Lin
(Department of Materials Engineering, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City, 24301, Taiwan)
,
Chen Chih-Ping
(Department of Materials Engineering, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City, 24301, Taiwan)
資料名:
Progress in Photovoltaics
(Progress in Photovoltaics)
巻:
28
号:
1
ページ:
49-59
発行年:
2020年
JST資料番号:
W0463A
ISSN:
1062-7995
CODEN:
PPHOED
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)