文献
J-GLOBAL ID:202002254939043168
整理番号:20A2134580
変成InGaAs光検出器構造の歪緩和に及ぼすバッファドーピングの影響【JST・京大機械翻訳】
Effects of buffer doping on the strain relaxation of metamorphic InGaAs photodetector structures
著者 (24件):
Gu Yi
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China)
,
Gu Yi
(Key Laboratory of Terahertz Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)
,
Gu Yi
(Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China)
,
Gu Yi
(University of Chinese Academy of Sciences, Beijing, 100049, China)
,
Huang Weiguo
(Key Laboratory of Terahertz Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)
,
Huang Weiguo
(University of Chinese Academy of Sciences, Beijing, 100049, China)
,
Liu Yage
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China)
,
Liu Yage
(Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China)
,
Liu Yage
(University of Chinese Academy of Sciences, Beijing, 100049, China)
,
Ma Yingjie
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China)
,
Ma Yingjie
(Key Laboratory of Terahertz Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)
,
Ma Yingjie
(Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China)
,
Zhang Jian
(Key Laboratory of Terahertz Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)
,
Zhang Jian
(University of Chinese Academy of Sciences, Beijing, 100049, China)
,
Gong Qian
(Key Laboratory of Terahertz Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)
,
Zhang Yonggang
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China)
,
Zhang Yonggang
(Key Laboratory of Terahertz Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)
,
Zhang Yonggang
(Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China)
,
Shao Xiumei
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China)
,
Shao Xiumei
(Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China)
,
Li Xue
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China)
,
Li Xue
(Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China)
,
Gong Haimei
(State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China)
,
Gong Haimei
(Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
120
ページ:
Null
発行年:
2020年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)