文献
J-GLOBAL ID:202002256638919978
整理番号:20A0230068
シリコン上の垂直磁気異方性を持つジスプロシウム鉄ガーネット薄膜【JST・京大機械翻訳】
Dysprosium Iron Garnet Thin Films with Perpendicular Magnetic Anisotropy on Silicon
著者 (9件):
Bauer Jackson J.
(Department of Materials Sciences and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, 13-4017, Cambridge, MA, 02139, USA)
,
Rosenberg Ethan R.
(Department of Materials Sciences and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, 13-4017, Cambridge, MA, 02139, USA)
,
Kundu Subhajit
(Department of Chemical Engineering and Materials Science, University of Minnesota - Twin Cities, 421 Washington, Ave. SE, Minneapolis, MN, 55455, USA)
,
Mkhoyan K. Andre
(Department of Chemical Engineering and Materials Science, University of Minnesota - Twin Cities, 421 Washington, Ave. SE, Minneapolis, MN, 55455, USA)
,
Quarterman Patrick
(NIST Center for Neutron Research, 100 Bureau Drive, Gaithersburg, MD, 20899, USA)
,
Grutter Alexander J.
(NIST Center for Neutron Research, 100 Bureau Drive, Gaithersburg, MD, 20899, USA)
,
Kirby Brian J.
(NIST Center for Neutron Research, 100 Bureau Drive, Gaithersburg, MD, 20899, USA)
,
Borchers Julie A.
(NIST Center for Neutron Research, 100 Bureau Drive, Gaithersburg, MD, 20899, USA)
,
Ross Caroline A.
(Department of Materials Sciences and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave, 13-4017, Cambridge, MA, 02139, USA)
資料名:
Advanced Electronic Materials
(Advanced Electronic Materials)
巻:
6
号:
1
ページ:
e1900820
発行年:
2020年
JST資料番号:
W2482A
ISSN:
2199-160X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)