文献
J-GLOBAL ID:202002256950656509
整理番号:20A2710163
絶縁体-金属および金属-絶縁体転移中のパーコレーションしきい値のブリンク上のスパッタ高品質VO_2薄膜における導電性クラスタのトポロジー【JST・京大機械翻訳】
Topology of conductive clusters in sputtered high-quality VO2 thin films on the brink of percolation threshold during insulator-to-metal and metal-to-insulator transitions
著者 (7件):
Koughia Cyril
(Department of Electrical and Computer Engineering, University of Saskatchewan, Saskatoon, Saskatchewan S7N 5A9, Canada)
,
Gunes Ozan
(Department of Electrical and Computer Engineering, University of Saskatchewan, Saskatoon, Saskatchewan S7N 5A9, Canada)
,
Zhang Chunzi
(Department of Electrical and Computer Engineering, University of Saskatchewan, Saskatoon, Saskatchewan S7N 5A9, Canada)
,
Wen Shi-Jie
(Cisco Systems, Inc., 170 West Tasman Drive, San Jose, California 95134)
,
Wong Rick
(Cisco Systems, Inc., 170 West Tasman Drive, San Jose, California 95134)
,
Yang Qiaoqin
(Department of Mechanical Engineering, University of Saskatchewan, Saskatoon, Saskatchewan S7N 5A9, Canada)
,
Kasap Safa O.
(Department of Electrical and Computer Engineering, University of Saskatchewan, Saskatoon, Saskatchewan S7N 5A9, Canada)
資料名:
Journal of Vacuum Science & Technology. A. Vacuum, Surfaces and Films
(Journal of Vacuum Science & Technology. A. Vacuum, Surfaces and Films)
巻:
38
号:
6
ページ:
063401-063401-12
発行年:
2020年
JST資料番号:
C0789B
ISSN:
0734-2101
CODEN:
JVTAD6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)