文献
J-GLOBAL ID:202002257556720372
整理番号:20A0451395
溶液処理したMOS_2:RES_2ナノ結晶のヘテロ構造の層間結合とダイオード特性【JST・京大機械翻訳】
Interlayer coupling and diode characteristics of heterostructures of solution processed MoS2:ReS2 nanocrystals
著者 (10件):
Sneha V.R.
(Department of Sciences, Amrita School of Engineering, Coimbatore, Amrita Vishwa Vidyapeetham, India)
,
Padma N.
(Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 85, India)
,
Padma N.
(Homi Bhabha National Institute, Bhabha Atomic Research Centre, Mumbai 85, India)
,
Yadav Ram Ashish
(Homi Bhabha National Institute, Bhabha Atomic Research Centre, Mumbai 85, India)
,
Yadav Ram Ashish
(Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 85, India)
,
Jagannath
(Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 85, India)
,
Girija K.G.
(Chemistry Division, Bhabha Atomic Research Centre, Mumbai 85, India)
,
Arvind A.
(Process Development Division, Bhabha Atomic Research Centre, Mumbai 85, India)
,
Rao Rekha
(Homi Bhabha National Institute, Bhabha Atomic Research Centre, Mumbai 85, India)
,
Rao Rekha
(Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 85, India)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
505
ページ:
Null
発行年:
2020年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)