文献
J-GLOBAL ID:202002257601721856
整理番号:20A0874709
DSOI NMOSFETにおける全電離線量応答のTCADシミュレーション【JST・京大機械翻訳】
TCAD Simulation of Total Ionizing Dose Response on DSOI nMOSFET
著者 (11件):
Huang Yang
(Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences,Beijing,China)
,
Han Zhengsheng
(University of Chinese Academy of Sciences,Beijing,China)
,
Luo Jiajun
(University of Chinese Academy of Sciences,Beijing,China)
,
Li Binhong
(Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences,Beijing,China)
,
Cristoloveanu Sorin
(TMEP-LAHC, Minatec, Grenoble INP, University Grenoble Alpes,France)
,
Li Bo
(Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences,Beijing,China)
,
Shen Chen
(Cogenda Corporation,Suzhou,China)
,
Song Yanfu
(Cogenda Corporation,Suzhou,China)
,
Wang Lei
(Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences,Beijing,China)
,
Li Duoli
(Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences,Beijing,China)
,
Liu Hainan
(Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences,Beijing,China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
EUROSOI-ULIS
ページ:
1-5
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)