文献
J-GLOBAL ID:202002257781207117
整理番号:20A0425953
ヘテロ接合n-MoO_x/p-Cd_3In_2Te_6の電気的性質【JST・京大機械翻訳】
Electrical Properties of Heterojunction n-MoOx/p-Cd3In2Te6
著者 (6件):
Koziarskyi I. P.
(Department of Physics of Semiconductors and Nanostructures, Yuriy Fedkovych Chernivtsi National University, Chernivtsi, Ukraine)
,
Maistruk E. V.
(Department of Electronics and Power Engineering, Yuriy Fedkovych Chernivtsi National University, Chernivtsi, Ukraine)
,
Koziarskyi D. P.
(Department of Electronics and Power Engineering, Yuriy Fedkovych Chernivtsi National University, Chernivtsi, Ukraine)
,
Mostovyi A. I.
(Department of Electronics and Power Engineering, Yuriy Fedkovych Chernivtsi National University, Chernivtsi, Ukraine)
,
Sydor O. M.
(Department of Layered Crystals, Frantsevich Institute for Problems of Materials Science, (Chernivtsi Department), Chernivtsi, Ukraine)
,
Potsiluiko-Hryhoriak H. V.
(Automatisation, Publishing and Polygraphy, Electrical Engineering Division, Chernivtsi Industrial College, Chernivtsi, Ukraine)
資料名:
Springer Proceedings in Physics
(Springer Proceedings in Physics)
巻:
240
ページ:
9-17
発行年:
2020年
JST資料番号:
W5066A
ISSN:
0930-8989
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)