文献
J-GLOBAL ID:202002258005975844
整理番号:20A0811448
MTM反ヒューズa-Si膜の電気的性質に及ぼすイオン注入修飾の影響【JST・京大機械翻訳】
Effect of Ion Implant Modification on Electrical Properties of MTM Antifuse a-Si Films
著者 (6件):
Xiao Z. Q.
(Key Laboratory of Radiation Hardened Integrated Circuit, China Electronics Technology Group Corporation No.58 Research Institute, Wuxi, China)
,
Hong G. S.
(Key Laboratory of Radiation Hardened Integrated Circuit, China Electronics Technology Group Corporation No.58 Research Institute, Wuxi, China)
,
Liu G. Z.
(Key Laboratory of Radiation Hardened Integrated Circuit, China Electronics Technology Group Corporation No.58 Research Institute, Wuxi, China)
,
Wu J. W.
(Key Laboratory of Radiation Hardened Integrated Circuit, China Electronics Technology Group Corporation No.58 Research Institute, Wuxi, China)
,
Wu S. Z.
(Key Laboratory of Radiation Hardened Integrated Circuit, China Electronics Technology Group Corporation No.58 Research Institute, Wuxi, China)
,
Zhu S. L.
(Key Laboratory of Radiation Hardened Integrated Circuit, China Electronics Technology Group Corporation No.58 Research Institute, Wuxi, China)
資料名:
IEEE Transactions on Device and Materials Reliability
(IEEE Transactions on Device and Materials Reliability)
巻:
20
号:
1
ページ:
146-151
発行年:
2020年
JST資料番号:
W1320A
ISSN:
1530-4388
CODEN:
ITDMA2
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)