文献
J-GLOBAL ID:202002258501947131
整理番号:20A2457951
MOCVDにより成長させたAlGaAsの電気的性質に及ぼす意図しない炭素取り込みの影響【JST・京大機械翻訳】
The effect of unintentional carbon incorporation on the electrical properties of AlGaAs grown by MOCVD
著者 (6件):
He Zhifang
(State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, China)
,
Wang Haizhu
(State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, China)
,
Wang Quhui
(State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, China)
,
Fan Jie
(State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, China)
,
Zou Yonggang
(State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, China)
,
Ma Xiaohui
(State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, China)
資料名:
Optical Materials
(Optical Materials)
巻:
108
ページ:
Null
発行年:
2020年
JST資料番号:
W0468A
ISSN:
0925-3467
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)