文献
J-GLOBAL ID:202002259328017928
整理番号:20A1789825
高感度光検出応用のためのMAPbBr_3単結晶p-nフォトダイオードとn-p-n光トリオードの作製【JST・京大機械翻訳】
Fabrication of MAPbBr3 Single Crystal p-n Photodiode and n-p-n Phototriode for Sensitive Light Detection Application
著者 (8件):
Liang Feng-Xia
(School of Materials Science and Engineering and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, 230009, China)
,
Jiang Jing-Jing
(School of Materials Science and Engineering and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, 230009, China)
,
Zhao Yao-Zu
(School of Materials Science and Engineering and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, 230009, China)
,
Zhang Zhi-Xiang
(School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, 230009, China)
,
Wu Di
(School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China)
,
Zeng Long-Hui
(Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Kowloon, Hung Hom, Hong Kong, 99077, China)
,
Tsang Yuen Hong
(Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Kowloon, Hung Hom, Hong Kong, 99077, China)
,
Luo Lin-Bao
(School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, 230009, China)
資料名:
Advanced Functional Materials
(Advanced Functional Materials)
巻:
30
号:
32
ページ:
e2001033
発行年:
2020年
JST資料番号:
W1336A
ISSN:
1616-301X
CODEN:
AFMDC6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)