文献
J-GLOBAL ID:202002259391855001
整理番号:20A2693532
FP-LAPW法による窒化ガリウム半導体の構造的,電子的および光学的性質【JST・京大機械翻訳】
Structural, electronic, and optical properties of the gallium nitride semiconductor by means of the FP-LAPW method
著者 (7件):
Gasmi F. Z.
(Radiation Physics Laboratory, Department of Physics, Faculty of Sciences, Badji Mokhtar University, Annaba, Algeria)
,
Gasmi F. Z.
(Research Center in Industrial Technologies, CRTI, Algiers, Algeria)
,
Chemam R.
(Radiation Physics Laboratory, Department of Physics, Faculty of Sciences, Badji Mokhtar University, Annaba, Algeria)
,
Graine R.
(Radiation Physics Laboratory, Department of Physics, Faculty of Sciences, Badji Mokhtar University, Annaba, Algeria)
,
Graine R.
(Research Center in Industrial Technologies, CRTI, Algiers, Algeria)
,
Boubir B.
(Research Center in Industrial Technologies, CRTI, Algiers, Algeria)
,
Meradji H.
(Radiation Physics Laboratory, Department of Physics, Faculty of Sciences, Badji Mokhtar University, Annaba, Algeria)
資料名:
Journal of Molecular Modeling
(Journal of Molecular Modeling)
巻:
26
号:
12
ページ:
356
発行年:
2020年
JST資料番号:
W4628A
ISSN:
1610-2940
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)