文献
J-GLOBAL ID:202002259567083360
整理番号:20A0484284
SiC基板上のエピタキシャルグラフェンの高安定性【JST・京大機械翻訳】
High Stability of Epitaxial Graphene on a SiC Substrate
著者 (11件):
Kujime Takaya
(Gaduate School of Advanced Technology and Science, Tokushima University, Tokushima, 770-8506, Japan)
,
Taniguchi Yoshiaki
(Gaduate School of Advanced Technology and Science, Tokushima University, Tokushima, 770-8506, Japan)
,
Taniguchi Yoshiaki
(Institute of Post-LED Photonics, Tokushima University, Tokushima, 770-8506, Japan)
,
Akiyama Daiu
(Gaduate School of Advanced Technology and Science, Tokushima University, Tokushima, 770-8506, Japan)
,
Kawamura Yusuke
(Gaduate School of Advanced Technology and Science, Tokushima University, Tokushima, 770-8506, Japan)
,
Kanai Yasushi
(Institute of Scientific and Industrial Research, Osaka University, Suita, 567-0047, Japan)
,
Matsumoto Kazuhiko
(Institute of Scientific and Industrial Research, Osaka University, Suita, 567-0047, Japan)
,
Ohno Yasuhide
(Gaduate School of Advanced Technology and Science, Tokushima University, Tokushima, 770-8506, Japan)
,
Ohno Yasuhide
(Institute of Post-LED Photonics, Tokushima University, Tokushima, 770-8506, Japan)
,
Nagase Masao
(Gaduate School of Advanced Technology and Science, Tokushima University, Tokushima, 770-8506, Japan)
,
Nagase Masao
(Institute of Post-LED Photonics, Tokushima University, Tokushima, 770-8506, Japan)
資料名:
Physica Status Solidi. B. Basic Solid State Physics
(Physica Status Solidi. B. Basic Solid State Physics)
巻:
257
号:
2
ページ:
e1900357
発行年:
2020年
JST資料番号:
C0599A
ISSN:
0370-1972
CODEN:
PSSBBD
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)