文献
J-GLOBAL ID:202002259823624870
整理番号:20A0334372
InSeナノリボンの磁気電子特性,キャリア移動度および歪効果【JST・京大機械翻訳】
Magneto-electronic properties, carrier mobility and strain effects of InSe nanoribbon
著者 (4件):
Li Y H
(Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, People’s Republic of China)
,
Zhang Z H
(Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, People’s Republic of China)
,
Fan Z Q
(Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, People’s Republic of China)
,
Zhou R L
(School of Physics and Information Engineering, Guangdong University of Education, Guangzhou 510303, People’s Republic of China)
資料名:
Journal of Physics. Condensed Matter
(Journal of Physics. Condensed Matter)
巻:
32
号:
1
ページ:
015303 (12pp)
発行年:
2020年
JST資料番号:
B0914B
ISSN:
0953-8984
CODEN:
JCOMEL
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)