文献
J-GLOBAL ID:202002260400205941
整理番号:20A0881324
4H-SiC MOSキャパシタの界面品質とバイアス温度不安定性の改善に及ぼす窒素プラズマと酸素プラズマの相乗的不動態化効果【JST・京大機械翻訳】
Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface quality and bias temperature instability of 4H-SiC MOS capacitors
著者 (6件):
Yang Chao
(Key Laboratory of Intelligent Control and Optimization for Industrial Equipment (Dalian University of Technology), Ministry of Education, School of Control Science and Engineering, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024...)
,
Yin Zhipeng
(Key Laboratory of Intelligent Control and Optimization for Industrial Equipment (Dalian University of Technology), Ministry of Education, School of Control Science and Engineering, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024...)
,
Zhang Fanglong
(Key Laboratory of Intelligent Control and Optimization for Industrial Equipment (Dalian University of Technology), Ministry of Education, School of Control Science and Engineering, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024...)
,
Su Yan
(State Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, China)
,
Qin Fuwen
(State Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, China)
,
Wang Dejun
(Key Laboratory of Intelligent Control and Optimization for Industrial Equipment (Dalian University of Technology), Ministry of Education, School of Control Science and Engineering, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024...)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
513
ページ:
Null
発行年:
2020年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)