文献
J-GLOBAL ID:202002261448969849
整理番号:20A2802296
シリコン光起電力用の両極性不動態化裏面電界層【JST・京大機械翻訳】
Ambipolar Passivated Back Surface Field Layer for Silicon Photovoltaics
著者 (6件):
Kang Sung Bum
(School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea)
,
Park Won Jin
(School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea)
,
Jeong Myeong Hoon
(School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea)
,
Kang So-Huei
(School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea)
,
Yang Changduk
(School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea)
,
Choi Kyoung Jin
(School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea)
資料名:
Advanced Functional Materials
(Advanced Functional Materials)
巻:
30
号:
50
ページ:
e2004943
発行年:
2020年
JST資料番号:
W1336A
ISSN:
1616-301X
CODEN:
AFMDC6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)