文献
J-GLOBAL ID:202002262234544246
整理番号:20A0905246
MBE再成長コンタクトを持つ130nm Al_0.75Ga_0.25N/Al_0.6Ga_0.4N HFETのRF性能【JST・京大機械翻訳】
RF Performance of 130 nm Al0.75Ga0.25N/Al0.6Ga0.4N HFETs with MBE-Regrown Contacts
著者 (10件):
Xue Hao
(The Ohio State University,Department of Electrical and Computer Engineering,Columbus,Ohio,USA,43210)
,
Lee Choong Hee
(The Ohio State University,Department of Electrical and Computer Engineering,Columbus,Ohio,USA,43210)
,
Hussian Kamal
(College of Engineering and Computing, University of South Carolina,301 Main Street, Columbia,SC,29208)
,
Razzak Towhidur
(The Ohio State University,Department of Electrical and Computer Engineering,Columbus,Ohio,USA,43210)
,
Abdullah Mamun
(College of Engineering and Computing, University of South Carolina,301 Main Street, Columbia,SC,29208)
,
Xia Zhanbo
(The Ohio State University,Department of Electrical and Computer Engineering,Columbus,Ohio,USA,43210)
,
Sohel Shahadat Hasan
(The Ohio State University,Department of Electrical and Computer Engineering,Columbus,Ohio,USA,43210)
,
Khan Asif
(College of Engineering and Computing, University of South Carolina,301 Main Street, Columbia,SC,29208)
,
Rajan Siddharth
(The Ohio State University,Department of Electrical and Computer Engineering,Columbus,Ohio,USA,43210)
,
Lu Wu
(The Ohio State University,Department of Electrical and Computer Engineering,Columbus,Ohio,USA,43210)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
DRC
ページ:
157-158
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)