文献
J-GLOBAL ID:202002262949061898
整理番号:20A0337977
(SPT)により作製したインジウムドープ硫化カドミウム薄膜の物理的性質【JST・京大機械翻訳】
Physical Properties of indium doped Cadmium sulfide thin films prepared by (SPT)
著者 (7件):
Hassan Ehssan S
(Department of Physics, College of Science, Mustansiriyah University, Baghdad, Iraq.)
,
Mubarak Tahseen H
(Department of Physics, College of Science, University of Diyala, Diyala, Iraq.)
,
Chiad Sami S
(Department of Physics, College of Education, Mustansiriyah University, Baghdad, Iraq.)
,
Habubi Nadir F
(Department of Physics, College of Education, Mustansiriyah University, Baghdad, Iraq.)
,
Khadayeir Abdulhussain A
(Department of Physics, College of Education, University of Al- Qadisiyah, Al-Qadisiya, Iraq.)
,
Dawood Mohamed O
(Department of Physics, College of Science, Mustansiriyah University, Baghdad, Iraq.)
,
Al-Baidhany Ismaeel A
(Department of Physics, College of Education, Mustansiriyah University, Baghdad, Iraq.)
資料名:
Journal of Physics: Conference Series
(Journal of Physics: Conference Series)
巻:
1294
号:
2
ページ:
022008 (8pp)
発行年:
2019年
JST資料番号:
W5565A
ISSN:
1742-6588
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)