文献
J-GLOBAL ID:202002263751778872
整理番号:20A0827059
逐次作製プロセスを用いたSi MOSFET上のInGaAs光検出器のモノリシック3D集積【JST・京大機械翻訳】
Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process
著者 (7件):
Geum Dae-Myeong
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea)
,
Kim Seong Kwang
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea)
,
Lee Subin
(Korea Institute of Science and Technology (KIST), Seoul, South Korea)
,
Lim Donghwan
(Division of Materials Science and Engineering, Hanyang University, Seoul, South Korea)
,
Kim Hyung-Jun
(Korea Institute of Science and Technology (KIST), Seoul, South Korea)
,
Choi Chang Hwan
(Division of Materials Science and Engineering, Hanyang University, Seoul, South Korea)
,
Kim Sang-Hyeon
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
41
号:
3
ページ:
433-436
発行年:
2020年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)