文献
J-GLOBAL ID:202002264233505547
整理番号:20A2558634
光起電力応用のための層拡散処理InBi_2Se_4薄膜の作製と特性評価【JST・京大機械翻訳】
Preparation and characterization of layer-diffusion processed InBi2Se4 thin films for photovoltaics application
著者 (10件):
Ali Nisar
(Department of Physics, GPG Jahanzeb College Saidu Sharif Swat 19130, KPK, Pakistan)
,
Ali Nisar
(Department of Physics, Faculty of Science, University Teknologi Malaysia, Johor, Malaysia)
,
Ahmed R.
(Department of Physics, Faculty of Science, University Teknologi Malaysia, Johor, Malaysia)
,
Ahmed R.
(Center for High Energy Physics, University of the Punjab, Quaid-e-Azam Campus, 54590, Lahore, Pakistan)
,
Hussain Arshad
(Department of Physics, Faculty of Science, University Teknologi Malaysia, Johor, Malaysia)
,
Hussain Arshad
(Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen University, Shenzhen, China)
,
Fu Yong Qing
(Faculty of Engineering & Environment, University of Northumbria, Newcastle upon Tyne, NE1 8ST, UK)
,
Ali Murad
(Department of Physics, GPG Jahanzeb College Saidu Sharif Swat 19130, KPK, Pakistan)
,
Ul Haq Bakhtiar
(Advanced Functional Materials & Optoelectronics Laboratory, Department of Physics, King Khalid University, Saudi Arabia)
,
AlFaify S.
(Advanced Functional Materials & Optoelectronics Laboratory, Department of Physics, King Khalid University, Saudi Arabia)
資料名:
Optik
(Optik)
巻:
220
ページ:
Null
発行年:
2020年
JST資料番号:
D0251A
ISSN:
0030-4026
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)