文献
J-GLOBAL ID:202002265034172621
整理番号:20A0451361
Geと単層GaAsとの相互作用:Ge島核形成から新規安定単分子層の形成まで【JST・京大機械翻訳】
Interaction of Ge with single layer GaAs: From Ge-island nucleation to formation of novel stable monolayers
著者 (6件):
Sozen Y.
(Department of Photonics, Izmir Institute of Technology, 35430 Izmir, Turkey)
,
Eren I.
(Department of Physics, Izmir Institute of Technology, 35430 Izmir, Turkey)
,
Ozen S.
(Department of Photonics, Izmir Institute of Technology, 35430 Izmir, Turkey)
,
Yagmurcukardes M.
(Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium)
,
Sahin H.
(Department of Photonics, Izmir Institute of Technology, 35430 Izmir, Turkey)
,
Sahin H.
(ICTP-ECAR Eurasian Center for Advanced Research, Izmir Institute of Technology, 35430 Izmir, Turkey)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
505
ページ:
Null
発行年:
2020年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)