文献
J-GLOBAL ID:202002265288446874
整理番号:20A0872926
ブリッジ脚におけるSiC MOSFETのクロストーク効果とボディダイオード損失低減のための受動共振レベルシフタ【JST・京大機械翻訳】
Passive Resonant Level Shifter for Suppression of Crosstalk Effect and Reduction of Body Diode Loss of SiC MOSFETs in Bridge Legs
著者 (5件):
Tang Ho-Tin
(Department of Electrical Engineering, Centre for Smart Energy Conversion and Utilization Research, City University of Hong Kong, Hong Kong)
,
Shu-Hung Chung Henry
(Department of Electrical Engineering, Centre for Smart Energy Conversion and Utilization Research, City University of Hong Kong, Hong Kong)
,
Wing-To Fan John
(Department of Electrical Engineering, Centre for Smart Energy Conversion and Utilization Research, City University of Hong Kong, Hong Kong)
,
Shun-Cheung Yeung Ryan
(Department of Electrical Engineering, Centre for Smart Energy Conversion and Utilization Research, City University of Hong Kong, Hong Kong)
,
Wing-Hong Lau Ricky
(Department of Electrical Engineering, Centre for Smart Energy Conversion and Utilization Research, City University of Hong Kong, Hong Kong)
資料名:
IEEE Transactions on Power Electronics
(IEEE Transactions on Power Electronics)
巻:
35
号:
7
ページ:
7204-7225
発行年:
2020年
JST資料番号:
D0211B
ISSN:
0885-8993
CODEN:
ITPEE8
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)