文献
J-GLOBAL ID:202002266317875764
整理番号:20A2448518
MBE成長GeSnの歪と組成に及ぼすex-situアニーリングの影響【JST・京大機械翻訳】
Impact of ex-situ annealing on strain and composition of MBE grown GeSn
著者 (9件):
Jia Hui
(Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom)
,
Jurczak Pamela
(Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom)
,
Yang Junjie
(Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom)
,
Tang Mingchu
(Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom)
,
Li Keshuang
(Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom)
,
Deng Huiwen
(Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom)
,
Dang Manyu
(Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom)
,
Chen Siming
(Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom)
,
Liu Huiyun
(Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom)
資料名:
Journal of Physics. D. Applied Physics
(Journal of Physics. D. Applied Physics)
巻:
53
号:
48
ページ:
485104 (8pp)
発行年:
2020年
JST資料番号:
B0092B
ISSN:
0022-3727
CODEN:
JPAPBE
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)