文献
J-GLOBAL ID:202002267184553827
整理番号:20A2204542
600°C以下の温度でのAl(BH_4)_3およびMH_3(M=P,As,Sb)のCVDによるヘテロエピタキシャルBPおよび関連Al-B-Sb-As-P膜の合成【JST・京大機械翻訳】
Synthesis of heteroepitaxial BP and related Al-B-Sb-As-P films via CVD of Al(BH4)3 and MH3 (M=P, As, Sb) at temperatures below 600 °C
著者 (12件):
Sims Patrick
(School of Molecular Sciences, Arizona State University, Tempe, Arizona, 85287-1604, United States of America)
,
Sims Patrick
(Department of Physics, Arizona State University, Tempe, Arizona, 85287-1504, United States of America)
,
Wallace Patrick
(School of Molecular Sciences, Arizona State University, Tempe, Arizona, 85287-1604, United States of America)
,
Wallace Patrick
(Department of Physics, Arizona State University, Tempe, Arizona, 85287-1504, United States of America)
,
Liu Lei
(School for Engineering of Matter Transport and Energy, Arizona State University, Tempe, Arizona, 85287, United States of America)
,
Liu Lei
(Department of Physics, Arizona State University, Tempe, Arizona, 85287-1504, United States of America)
,
Zhuang Houlong
(School for Engineering of Matter Transport and Energy, Arizona State University, Tempe, Arizona, 85287, United States of America)
,
Zhuang Houlong
(Department of Physics, Arizona State University, Tempe, Arizona, 85287-1504, United States of America)
,
Kouvetakis J
(School of Molecular Sciences, Arizona State University, Tempe, Arizona, 85287-1604, United States of America)
,
Kouvetakis J
(Department of Physics, Arizona State University, Tempe, Arizona, 85287-1504, United States of America)
,
Menendez Jose
(School for Engineering of Matter Transport and Energy, Arizona State University, Tempe, Arizona, 85287, United States of America)
,
Menendez Jose
(Department of Physics, Arizona State University, Tempe, Arizona, 85287-1504, United States of America)
資料名:
Semiconductor Science and Technology
(Semiconductor Science and Technology)
巻:
35
号:
8
ページ:
085034 (9pp)
発行年:
2020年
JST資料番号:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)