文献
J-GLOBAL ID:202002267868033522
整理番号:20A2501585
280nm AlGaN LED応用のためのp電極構造の改善【JST・京大機械翻訳】
Improvement of p-electrode structures for 280 nm AlGaN LED applications
著者 (8件):
Chang Kai-Ping
(Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, Republic of China)
,
Jheng Jhih-Yuan
(Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, Republic of China)
,
Huang Shih-Yung
(Department of Industrial Engineering and Management, Da-Yeh University, Changhua 51591, Taiwan, Republic of China)
,
Wang Wei-Kai
(Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan, Republic of China)
,
Horng Ray-Hua
(Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, Republic of China)
,
Wuu Dong-Sing
(Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, Republic of China)
,
Wuu Dong-Sing
(Innovation and Development Center of Sustainable Agriculture, National Chung Hsing University, Taichung 40227, Taiwan, Republic of China)
,
Wuu Dong-Sing
(i-Center for Advanced Science and Technology, National Chung Hsing University 40227, Taiwan, Republic of China)
資料名:
Semiconductor Science and Technology
(Semiconductor Science and Technology)
巻:
35
号:
10
ページ:
105023 (8pp)
発行年:
2020年
JST資料番号:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)