文献
J-GLOBAL ID:202002268270343229
整理番号:20A2501591
最適化Al_0.12Ga_0.88N電子ブロッキング層を用いたInGaN系レーザダイオードにおける効率増強【JST・京大機械翻訳】
Efficiency enhancement in InGaN-based laser diodes using an optimized Al0.12Ga0.88N electron blocking layer
著者 (6件):
Sandhu Harmanpreet Kaur
( Centre for Applied Research in Electronics, Indian Institute of Technology, Hauz Khas, New Delhi 110016, India)
,
Sandhu Harmanpreet Kaur
( Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110054, India)
,
Sharma Abhishek
( Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110054, India)
,
Jain Alok
( Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110054, India)
,
Jain Alok
( Centre for Personnel Talent Management, Metcalfe House, Delhi 110054, India)
,
Das Samaresh
( Centre for Applied Research in Electronics, Indian Institute of Technology, Hauz Khas, New Delhi 110016, India)
資料名:
Semiconductor Science and Technology
(Semiconductor Science and Technology)
巻:
35
号:
10
ページ:
105017 (12pp)
発行年:
2020年
JST資料番号:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)