文献
J-GLOBAL ID:202002268796349523
整理番号:20A0569915
ナフタレンジイミド(NDI)誘導体の容易な合成 凝集誘起発光,光物理および輸送特性【JST・京大機械翻訳】
Facile synthesis of naphthalene diimide (NDI) derivatives: aggregation-induced emission, photophysical and transport properties
著者 (9件):
Kumari Neelam
(Advanced Materials and Devices Metrology Division, Photovoltaic Metrology Group, CSIR-National Physical Laboratory, New Delhi, India)
,
Kumari Neelam
(Academy of Scientific and Innovative Research, HRDG, Ghaziabad, India)
,
Naqvi Samya
(Advanced Materials and Devices Metrology Division, Photovoltaic Metrology Group, CSIR-National Physical Laboratory, New Delhi, India)
,
Ahuja Mehak
(Advanced Materials and Devices Metrology Division, Photovoltaic Metrology Group, CSIR-National Physical Laboratory, New Delhi, India)
,
Ahuja Mehak
(Academy of Scientific and Innovative Research, HRDG, Ghaziabad, India)
,
Bhardwaj Komal
(Advanced Materials and Devices Metrology Division, Photovoltaic Metrology Group, CSIR-National Physical Laboratory, New Delhi, India)
,
Bhardwaj Komal
(Academy of Scientific and Innovative Research, HRDG, Ghaziabad, India)
,
Kumar Rachana
(Advanced Materials and Devices Metrology Division, Photovoltaic Metrology Group, CSIR-National Physical Laboratory, New Delhi, India)
,
Kumar Rachana
(Academy of Scientific and Innovative Research, HRDG, Ghaziabad, India)
資料名:
Journal of Materials Science. Materials in Electronics
(Journal of Materials Science. Materials in Electronics)
巻:
31
号:
5
ページ:
4310-4322
発行年:
2020年
JST資料番号:
W0003A
ISSN:
0957-4522
CODEN:
JMTSAS
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)