文献
J-GLOBAL ID:202002269764475615
整理番号:20A2626418
計算機トモグラフィーイメージングに基づく絶縁ゲートバイポーラトランジスタの自動欠陥検出【JST・京大機械翻訳】
Automated defect detection of insulated gate bipolar transistor based on computed laminography imaging
著者 (14件):
Li Yan
(Beijing Engineering Research Center of Radiographic Techniques and Equipment, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, China)
,
Li Yan
(School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing, China)
,
Liu Shuangquan
(Beijing Engineering Research Center of Radiographic Techniques and Equipment, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, China)
,
Liu Shuangquan
(School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing, China)
,
Li Chunmiao
(Beijing Engineering Research Center of Radiographic Techniques and Equipment, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, China)
,
Li Chunmiao
(School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing, China)
,
Zheng Yushuang
(Beijing Engineering Research Center of Radiographic Techniques and Equipment, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, China)
,
Zheng Yushuang
(School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing, China)
,
Wei Cunfeng
(Beijing Engineering Research Center of Radiographic Techniques and Equipment, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, China)
,
Wei Cunfeng
(School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing, China)
,
Liu Baodong
(Beijing Engineering Research Center of Radiographic Techniques and Equipment, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, China)
,
Liu Baodong
(School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing, China)
,
Yang Yao
(Beijing Engineering Research Center of Radiographic Techniques and Equipment, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, China)
,
Yang Yao
(School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing, China)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
115
ページ:
Null
発行年:
2020年
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)