文献
J-GLOBAL ID:202002269833654264
整理番号:20A2568207
ナノエレクトロニクスのための高異方性性能を有する円形SnS_0.5Se_0.5ナノシート【JST・京大機械翻訳】
Circular SnS0.5Se0.5 Nanosheets with Highly Anisotropic Performance for Nanoelectronics
著者 (9件):
Tao Lin
(State Key Laboratory of Superhard Material, and College of Physics, Jilin University, P. R. China)
,
Tao Lin
(Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, P. R. China)
,
Yao Bin
(State Key Laboratory of Superhard Material, and College of Physics, Jilin University, P. R. China)
,
Yao Bin
(Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, P. R. China)
,
Wen Peiting
(Institute of Semiconductors, South China Normal University, P. R. China)
,
Yue Qian
(Institute of Semiconductors, South China Normal University, P. R. China)
,
Zheng Zhaoqiang
(School of Materials and Energy, Guangdong University of Technology, P. R. China)
,
Luo Qingyi
(School of Materials and Energy, Guangdong University of Technology, P. R. China)
,
Gao Wei
(Institute of Semiconductors, South China Normal University, P. R. China)
資料名:
ACS Applied Nano Materials
(ACS Applied Nano Materials)
巻:
3
号:
10
ページ:
10270-10283
発行年:
2020年
JST資料番号:
W5033A
ISSN:
2574-0970
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)