文献
J-GLOBAL ID:202002270616422270
整理番号:20A1365016
TCADによるβ-Ga_2O_3MOSFETデバイスの最適化【JST・京大機械翻訳】
Beta-Ga2O3 MOSFET Device Optimization via TCAD
著者 (6件):
He Minghao
(Shenzhen Institute of Wide-bandgap Semiconductors,Shenzhen,China,518100)
,
Zeng Fanming
(The Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology,Shenzhen,Guangdong,China,518055)
,
Cheng Wei-Chih
(Hong Kong University of Science and Technology,Department of Electronic and Computer Engineering,Hong Kong,China)
,
Wang Qing
(The Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology,Shenzhen,Guangdong,China,518055)
,
Yu Hongyu
(The Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology,Shenzhen,Guangdong,China,518055)
,
Ang Kah Wee
(National University of Singapore, 4 Engineering Drive 3,Department of Electrical and Computer Engineering,Singapore,117583)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
EDTM
ページ:
1-4
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)