文献
J-GLOBAL ID:202002272010442830
整理番号:20A0625389
グラフェン上のナフチル末端キャップオリゴチオフェンの表面制御結晶整列 その場X線回折による薄膜成長の研究【JST・京大機械翻訳】
Surface-Controlled Crystal Alignment of Naphthyl End-Capped Oligothiophene on Graphene: Thin-Film Growth Studied by in Situ X-ray Diffraction
著者 (17件):
Huss-Hansen Mathias K.
(Department of Physics, Technical University of Denmark, Denmark)
,
Hodas Martin
(Institut fuer Angewandte Physik, Universitaet Tuebingen, Germany)
,
Mrkyvkova Nada
(Institute of Physics, Slovak Academy of Sciences, Slovakia)
,
Mrkyvkova Nada
(Centre of Excellence for Advanced Materials Application, Slovakia)
,
Hagara Jakub
(Institute of Physics, Slovak Academy of Sciences, Slovakia)
,
Hagara Jakub
(Centre of Excellence for Advanced Materials Application, Slovakia)
,
Jensen Bjarke B. E.
(Newtec Engineering A/S, Denmark)
,
Osadnik Andreas
(Kekule-Institute for Organic Chemistry and Biochemistry, University of Bonn, Germany)
,
Luetzen Arne
(Kekule-Institute for Organic Chemistry and Biochemistry, University of Bonn, Germany)
,
Majkova Eva
(Institute of Physics, Slovak Academy of Sciences, Slovakia)
,
Majkova Eva
(Centre of Excellence for Advanced Materials Application, Slovakia)
,
Siffalovic Peter
(Institute of Physics, Slovak Academy of Sciences, Slovakia)
,
Siffalovic Peter
(Centre of Excellence for Advanced Materials Application, Slovakia)
,
Schreiber Frank
(Institut fuer Angewandte Physik, Universitaet Tuebingen, Germany)
,
Tavares Luciana
(NanoSYD, Mads Clausen Institute, University of Southern Denmark, Denmark)
,
Kjelstrup-Hansen Jakob
(NanoSYD, Mads Clausen Institute, University of Southern Denmark, Denmark)
,
Knaapila Matti
(Department of Physics, Technical University of Denmark, Denmark)
資料名:
Langmuir
(Langmuir)
巻:
36
号:
8
ページ:
1898-1906
発行年:
2020年
JST資料番号:
A0231B
ISSN:
0743-7463
CODEN:
LANGD5
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)