文献
J-GLOBAL ID:202002272999106548
整理番号:20A0646925
Li添加Naフラックス法による高透明度GaN単結晶の成長【JST・京大機械翻訳】
Growth of GaN single crystals with high transparency by the Li-added Na-flux method
著者 (6件):
Nakajima Tatsuhiko
(Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan)
,
Imanishi Masayuki
(Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan)
,
Yamada Takumi
(Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan)
,
Murakami Kosuke
(Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan)
,
Yoshimura Masashi
(Institute of Laser Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan)
,
Mori Yusuke
(Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
535
ページ:
Null
発行年:
2020年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)