文献
J-GLOBAL ID:202002274424891990
整理番号:20A0489309
二重応用のための新しい高伝導性直接ギャップp型半導体La_1-xY_xCuO_:透明エレクトロニクスと熱電気【JST・京大機械翻訳】
A New Highly Conductive Direct Gap p-Type Semiconductor La1-xYxCuOS for Dual Applications: Transparent Electronics and Thermoelectricity
著者 (5件):
Zhang Nengduo
(Department of Materials Science and Engineering, National University of Singapore, Singapore)
,
Zhang Nengduo
(NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore)
,
Liu Xixia
(Department of Materials Science and Engineering, National University of Singapore, Singapore)
,
Lim David Boon Kiang
(Department of Materials Science and Engineering, National University of Singapore, Singapore)
,
Gong Hao
(Department of Materials Science and Engineering, National University of Singapore, Singapore)
資料名:
ACS Applied Materials & Interfaces
(ACS Applied Materials & Interfaces)
巻:
12
号:
5
ページ:
6090-6096
発行年:
2020年
JST資料番号:
W2329A
ISSN:
1944-8244
CODEN:
AAMICK
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)