文献
J-GLOBAL ID:202002276224442388
整理番号:20A2235306
化学蒸着によるSiCナノワイヤの堆積速度に及ぼすプロセスパラメータの影響
Effects of Process Parameters on Deposition Rate of SiC Nanowires by Chemical Vapor Deposition
著者 (5件):
Li Binbin
(College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics)
,
Huang Haiquan
(College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics)
,
He Tao
(College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics)
,
Mao Bangxiao
(College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics)
,
Wang Xingbang
(College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics)
資料名:
Journal of Chemical Engineering of Japan
(Journal of Chemical Engineering of Japan)
巻:
53
号:
7
ページ:
273-279(J-STAGE)
発行年:
2020年
JST資料番号:
S0629A
ISSN:
0021-9592
CODEN:
JCEJAQ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
日本 (JPN)
言語:
英語 (EN)