文献
J-GLOBAL ID:202002276350021915
整理番号:20A1953430
垂直VO_2ナノワイヤアレイの低温ウエハスケール作製【JST・京大機械翻訳】
Low-temperature wafer-scale fabrication of vertical VO2 nanowire arrays
著者 (11件):
Shi Run
(Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China)
,
Kong Dejun
(Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China)
,
Shen Nan
(Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China)
,
Gan Yichen
(Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China)
,
Zhao Yaxuan
(Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China)
,
Wang Zixu
(Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China)
,
Wang Weijun
(Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China)
,
Wang Jingwei
(Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China)
,
Amini Abbas
(Center for Infrastructure Engineering, Western Sydney University, Kingswood, NSW 2751, Australia)
,
Wang Ning
(Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, People’s Republic of China)
,
Cheng Chun
(Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
117
号:
8
ページ:
083108-083108-5
発行年:
2020年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)