文献
J-GLOBAL ID:202002276981528729
整理番号:20A0763407
強誘電体PbZr_0 ・_2Ti_0 ・_8O_3/Nd_0.3Sm_0.25Sr_0 ・45MnO_3液体ゲート電気二重層トランジスタに対する抵抗の高不揮発性変調【JST・京大機械翻訳】
High nonvolatile modulation of resistance on a ferroelectric PbZr0・2Ti0・8O3 /Nd0.3Sm0.25Sr0・45MnO3 liquid-gated electric-double-layer transistors
著者 (8件):
Shao F.
(School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
,
Zhang L.P.
(School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
,
Zhang F.Q.
(School of Materials Science and Engineering, Shandong Jianzhu University, Jinan, 250101, China)
,
Teng J.
(School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
,
Chen J.K.
(School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
,
Xu X.G.
(School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
,
Miao J.
(School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
,
Jiang Y.
(School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
資料名:
Solid State Communications
(Solid State Communications)
巻:
309
ページ:
Null
発行年:
2020年
JST資料番号:
H0499A
ISSN:
0038-1098
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
イギリス (GBR)
言語:
英語 (EN)