文献
J-GLOBAL ID:202002277090747786
整理番号:20A2549398
ZnGeAs_2のオプトエレクトロニック研究:第一原理TB-mBJ近似【JST・京大機械翻訳】
Optoelectronic investigations of ZnGeAs2: A first principle TB-mBJ approximation
著者 (5件):
Gaur Aditi
(Department of Electrical Engineering, Manipal University Jaipur, Jaipur-303007, Rajasthan, India)
,
Khan Karina
(Department of Physics, Manipal University Jaipur, Jaipur-303007, India)
,
Ahuja Ushma
(Department of Electrical Engineering, NMIMS, Mukesh Patel School of Technology Management and Engineering, Mumbai-400056, Maharashtra, India)
,
Sahariya Jagrati
(Department of Physics, National Institute of Technology, Uttarakhand, Srinagar (Garhwal)-246174, India)
,
Soni Amit
(Department of Electrical Engineering, Manipal University Jaipur, Jaipur-303007, Rajasthan, India)
資料名:
AIP Conference Proceedings
(AIP Conference Proceedings)
巻:
2265
号:
1
ページ:
030368-030368-4
発行年:
2020年
JST資料番号:
D0071C
ISSN:
0094-243X
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)