文献
J-GLOBAL ID:202002277331155217
整理番号:20A0449538
コア準位X線光電子分光法を用いて調べたSi(100)-2×1表面上のハフニウム超薄膜と二けい化ハフニウム島の初期酸化過程【JST・京大機械翻訳】
Initial oxidation processes of ultrathin hafnium film and hafnium disilicide islands on Si(100)-2 × 1 surfaces studied using core-level X-ray photoelectron spectroscopy
著者 (5件):
Kakiuchi Takuhiro
(Chemistry Course, Faculty of Science, Ehime University, 2-5 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan)
,
Yamasaki Hideki
(Chemistry Course, Faculty of Science, Ehime University, 2-5 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan)
,
Tsukada Chie
(Materials Sciences Research Center, Japan Atomic Energy Agency, 1-1-1 Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan)
,
Tsukada Chie
(Synchrotron Radiation Research Center, Nagoya University, 1 Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan)
,
Yoshigoe Akitaka
(Materials Sciences Research Center, Japan Atomic Energy Agency, 1-1-1 Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan)
資料名:
Surface Science
(Surface Science)
巻:
693
ページ:
Null
発行年:
2020年
JST資料番号:
C0129B
ISSN:
0039-6028
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)