文献
J-GLOBAL ID:202002277669310802
整理番号:20A0495677
HVおよびLV ESD保護のためのシリコン制御整流装置に対する全電離線量効果の比較研究【JST・京大機械翻訳】
Comparative Study of Total Ionizing Dose Effects on the Silicon-Controlled Rectifier Devices for HV and LV ESD Protections
著者 (6件):
Chen Zhuojun
(Hunan University,Department of School of Physics and Electronics,Changsha,China,410082)
,
Lu Wenzhao
(Hunan University,Department of School of Physics and Electronics,Changsha,China,410082)
,
Wu Ming
(Hunan University,Department of School of Physics and Electronics,Changsha,China,410082)
,
Peng Wei
(Hunan University,Department of School of Physics and Electronics,Changsha,China,410082)
,
Zeng Yun
(Hunan University,Department of School of Physics and Electronics,Changsha,China,410082)
,
Jin Xiangliang
(Hunan Normal University,Department of School of Physics and Electronics,Changsha,China,410081)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
IPFA
ページ:
1-4
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)