文献
J-GLOBAL ID:202002277955241621
整理番号:20A0581065
p-n接合とSchottky障壁ダイオードに基づくGaNベータボルト電池の比較研究【JST・京大機械翻訳】
Comparative study of GaN betavoltaic battery based on p-n junction and Schottky barrier diode
著者 (8件):
Zheng Renzhou
(College of Physics, Jilin University, Changchun, 130012, China)
,
Lu Jingbin
(College of Physics, Jilin University, Changchun, 130012, China)
,
Liu Yumin
(College of Physics, Jilin University, Changchun, 130012, China)
,
Li Xiaoyi
(College of Physics, Jilin University, Changchun, 130012, China)
,
Xu Xu
(College of Physics, Jilin University, Changchun, 130012, China)
,
He Rui
(College of Physics, Jilin University, Changchun, 130012, China)
,
Tao Zexin
(College of Physics, Jilin University, Changchun, 130012, China)
,
Gao Yuhang
(College of Physics, Jilin University, Changchun, 130012, China)
資料名:
Radiation Physics and Chemistry
(Radiation Physics and Chemistry)
巻:
168
ページ:
Null
発行年:
2020年
JST資料番号:
D0627A
ISSN:
0969-806X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)