文献
J-GLOBAL ID:202002278488128272
整理番号:20A0582290
Kelvinプローブ力顕微鏡による溶液処理フタロシアニン薄膜とn-Siのヘテロ接合におけるエネルギー準位曲げに関する研究【JST・京大機械翻訳】
Study on energy level bending at heterojunction of solution-processed phthalocyanine thin film and n-Si by Kelvin probe force microscopy
著者 (5件):
Ishiura Ryo
(Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka, 565-0871, Japan)
,
Fujii Akihiko
(Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka, 565-0871, Japan)
,
Arita Makoto
(Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan)
,
Sudoh Koichi
(The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan)
,
Ozaki Masanori
(Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka, 565-0871, Japan)
資料名:
Organic Electronics
(Organic Electronics)
巻:
78
ページ:
Null
発行年:
2020年
JST資料番号:
W1352A
ISSN:
1566-1199
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)