文献
J-GLOBAL ID:202002278729817070
整理番号:20A1940184
中程度の圧力下で生成されたマイクロ波励起プラズマジェット中の窒素原子密度の測定
Measurements of nitrogen atom density in a microwave-excited plasma jet produced under moderate pressures
著者 (19件):
Kim Jaeho
(Research Institute for Advanced Electronics and Photonics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan)
,
Kim Jaeho
(GaN Advanced Device Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya, Aichi, Japan)
,
Takeda Keigo
(Center for Low-temperature Plasma Sciences, Nagoya University, Nagoya, Aichi, Japan)
,
Takeda Keigo
(Faculty of Science and Technology, Meijo University, Nagoya, Aichi, Japan)
,
Itagaki Hirotomo
(Research Institute for Advanced Electronics and Photonics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan)
,
Itagaki Hirotomo
(Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8564, Japan)
,
Wang Xue-lun
(Research Institute for Advanced Electronics and Photonics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan)
,
Wang Xue-lun
(GaN Advanced Device Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya, Aichi, Japan)
,
Hirose Shingo
(Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8564, Japan)
,
Ogiso Hisato
(Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8564, Japan)
,
Shimizu Tetsuji
(Research Institute for Advanced Electronics and Photonics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan)
,
Shimizu Tetsuji
(GaN Advanced Device Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya, Aichi, Japan)
,
Kumagai Naoto
(Research Institute for Advanced Electronics and Photonics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan)
,
Kumagai Naoto
(GaN Advanced Device Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya, Aichi, Japan)
,
Tsutsumi Takayoshi
(Center for Low-temperature Plasma Sciences, Nagoya University, Nagoya, Aichi, Japan)
,
Kondo Hiroki
(Center for Low-temperature Plasma Sciences, Nagoya University, Nagoya, Aichi, Japan)
,
Hori Masaru
(Center for Low-temperature Plasma Sciences, Nagoya University, Nagoya, Aichi, Japan)
,
Sakakita Hajime
(Research Institute for Advanced Electronics and Photonics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan)
,
Sakakita Hajime
(GaN Advanced Device Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya, Aichi, Japan)
資料名:
IEEJ Transactions on Electrical and Electronic Engineering
(IEEJ Transactions on Electrical and Electronic Engineering)
巻:
15
号:
9
ページ:
1281-1287
発行年:
2020年09月
JST資料番号:
W1854A
ISSN:
1931-4973
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)