文献
J-GLOBAL ID:202002278751011817
整理番号:20A2501871
長波長領域におけるInGaNナノワイヤからの光応答改善における欠陥飽和の役割【JST・京大機械翻訳】
Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regime
著者 (10件):
Nag Dhiman
(Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India)
,
Sarkar Ritam
(Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India)
,
Bhunia Swagata
(Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, India)
,
Aggarwal Tarni
(Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India)
,
Ghosh Kankat
(Department of Electrical Engineering, Indian Institute of Technology Jammu, Jammu 181221, India)
,
Sinha Shreekant
(Department of Photonics, National Chiao Tung University, Hsinchu 30010, Taiwan)
,
Ganguly Swaroop
(Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India)
,
Saha Dipankar
(Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India)
,
Horng Ray-Hua
(Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan)
,
Laha Apurba
(Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India)
資料名:
Nanotechnology
(Nanotechnology)
巻:
31
号:
49
ページ:
495705 (9pp)
発行年:
2020年
JST資料番号:
W0108A
ISSN:
0957-4484
CODEN:
NNOTER
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)