文献
J-GLOBAL ID:202002279231972405
整理番号:20A1070509
トリス(ジメチルアミノ)シラン前駆体を用いたプラズマ増強原子層堆積のための金属酸化物下層の電気陰性度におけるSiO_2成長速度と差の間の相関【JST・京大機械翻訳】
Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor
著者 (7件):
Maeda Erika
(Shibaura Institute of Technology, 3-7-5 Toyosu, Koto-ku, Tokyo 135-8548, Japan)
,
Nabatame Toshihide
(National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan)
,
Hirose Masafumi
(Shibaura Institute of Technology, 3-7-5 Toyosu, Koto-ku, Tokyo 135-8548, Japan)
,
Inoue Mari
(National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan)
,
Ohi Akihiko
(National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan)
,
Ikeda Naoki
(National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan)
,
Kiyono Hajime
(Shibaura Institute of Technology, 3-7-5 Toyosu, Koto-ku, Tokyo 135-8548, Japan)
資料名:
Journal of Vacuum Science & Technology. A. Vacuum, Surfaces and Films
(Journal of Vacuum Science & Technology. A. Vacuum, Surfaces and Films)
巻:
38
号:
3
ページ:
032409-032409-6
発行年:
2020年
JST資料番号:
C0789B
ISSN:
0734-2101
CODEN:
JVTAD6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)