文献
J-GLOBAL ID:202002280820124990
整理番号:20A2448824
BN-グラフェン横方向トンネル層を用いた金属/MoS_2界面の輸送特性の変調【JST・京大機械翻訳】
Modulation of the transport properties of metal/MoS2 interfaces using BN-graphene lateral tunneling layers
著者 (8件):
Guo Rui
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, Advanced Interdisciplinary Research Center for Flexible Electronics, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, People’s Republic of ...)
,
Su Jie
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, Advanced Interdisciplinary Research Center for Flexible Electronics, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, People’s Republic of ...)
,
Zhang Pengliang
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, Advanced Interdisciplinary Research Center for Flexible Electronics, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, People’s Republic of ...)
,
He Fuchao
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, Advanced Interdisciplinary Research Center for Flexible Electronics, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, People’s Republic of ...)
,
Lin Zhenhua
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, Advanced Interdisciplinary Research Center for Flexible Electronics, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, People’s Republic of ...)
,
Zhang Jincheng
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, Advanced Interdisciplinary Research Center for Flexible Electronics, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, People’s Republic of ...)
,
Chang Jingjing
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, Advanced Interdisciplinary Research Center for Flexible Electronics, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, People’s Republic of ...)
,
Hao Yue
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, Advanced Interdisciplinary Research Center for Flexible Electronics, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, People’s Republic of ...)
資料名:
Nanotechnology
(Nanotechnology)
巻:
31
号:
48
ページ:
485204 (8pp)
発行年:
2020年
JST資料番号:
W0108A
ISSN:
0957-4484
CODEN:
NNOTER
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)