文献
J-GLOBAL ID:202002281633280059
整理番号:20A1751439
TSVベース高帯域幅メモリ(HBM)構造におけるマイクロバンプ継手のCu突出と性能に及ぼす電気-熱-機械的多物理場の影響の三次元シミュレーション【JST・京大機械翻訳】
Three-dimensional Simulation of Effects of Electro-Thermo-Mechanical Multi-physical Fields on Cu Protrusion and Performance of Micro-bump Joints in TSVs Based High Bandwidth Memory (HBM) Structures
著者 (6件):
Zhou Jie-Ying
(South China University of Technology,School of Materials Science and Engineering,Guangzhou,China,510640)
,
Wang Zheng
(South China University of Technology,School of Materials Science and Engineering,Guangzhou,China,510640)
,
Wei Cheng
(South China University of Technology,School of Materials Science and Engineering,Guangzhou,China,510640)
,
Fei Jiu-Bin
(South China University of Technology,School of Materials Science and Engineering,Guangzhou,China,510640)
,
Ke Chang-Bo
(South China University of Technology,School of Materials Science and Engineering,Guangzhou,China,510640)
,
Zhang Xin-Ping
(South China University of Technology,School of Materials Science and Engineering,Guangzhou,China,510640)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
ECTC
ページ:
1659-1664
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)