文献
J-GLOBAL ID:202002281760778844
整理番号:20A2443234
高スケール,高耐久性,ΣΔゲート,ナノワイヤ強誘電体FETメモリトランジスタ【JST・京大機械翻訳】
Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors
著者 (7件):
Bae Jong-Ho
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Kwon Daewoong
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Jeon Namho
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Cheema Suraj
(Department of Material Science, University of California at Berkeley, Berkeley, CA, USA)
,
Tan Ava Jiang
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Hu Chenming
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Salahuddin Sayeef
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
41
号:
11
ページ:
1637-1640
発行年:
2020年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)