文献
J-GLOBAL ID:202002284306937162
整理番号:20A2621026
横方向/垂直アスペクト比トラッピングにより220nmSOI上に成長させたInP系レーザ【JST・京大機械翻訳】
InP-based Lasers Grown on 220 nm SOI by Lateral/vertical Aspect Ratio Trapping
著者 (6件):
Han Yu
(Hong Kong University of Science and Technology,Department of Electronic and Computer Engineering,Hong Kong)
,
Yan Zhao
(Hong Kong University of Science and Technology,Department of Electronic and Computer Engineering,Hong Kong)
,
Ng Wai Kit
(Hong Kong University of Science and Technology,Department of Physics,Hong Kong)
,
Xue Ying
(Hong Kong University of Science and Technology,Department of Electronic and Computer Engineering,Hong Kong)
,
Wong Kam Sing
(Hong Kong University of Science and Technology,Department of Physics,Hong Kong)
,
Lau Kei May
(Hong Kong University of Science and Technology,Department of Electronic and Computer Engineering,Hong Kong)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
IPC
ページ:
1-2
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)