文献
J-GLOBAL ID:202002284809443403
整理番号:20A1641005
反強磁性Mott絶縁体CeOIのエピタキシャル成長とバンド構造【JST・京大機械翻訳】
Epitaxial growth and band structure of antiferromagnetic Mott insulator CeOI
著者 (8件):
Cai Xinqiang
(State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China)
,
Xu Zhilin
(State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China)
,
Zhou Hui
(Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China)
,
Ren Jun
(State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China)
,
Li Na
(Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China)
,
Meng Sheng
(Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China)
,
Ji Shuai-Hua
(State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China)
,
Chen Xi
(State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China)
資料名:
Physical Review Materials
(Physical Review Materials)
巻:
4
号:
6
ページ:
064003
発行年:
2020年
JST資料番号:
W3690A
ISSN:
2475-9953
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)