文献
J-GLOBAL ID:202002285179290315
整理番号:20A1114687
光支援化学浴法により堆積したセレン化亜鉛薄膜の相変態:アニーリング温度の影響【JST・京大機械翻訳】
Phase transformation on zinc selenide thin films deposited by photo-assisted chemical bath method: The effect of annealing temperature
著者 (8件):
Hile D.D.
(Department of Physics, University of the Free State, 9866, Phuthaditjhaba, South Africa)
,
Swart H.C.
(Department of Physics, University of the Free State, ZA9300, Bloemfontein, South Africa)
,
Motloung S.V.
(Department of Physics, Nelson Mandela University, P. O. Box 77000, Port Elizabeth, 6031, South Africa)
,
Motloung S.V.
(Department of Physics, Sefako Makgatho Health Sciences University, P.O. Box 94, Medunsa, 0204, South Africa)
,
Pawade V.B.
(Department of Applied Physics, Laxminarayan Institute of Technology, RTMNU, Nagpur, 440033, India)
,
Kroon R.E.
(Department of Physics, University of the Free State, ZA9300, Bloemfontein, South Africa)
,
Egbo K.O.
(Department of Physics, City University of Hong Kong, 83 Tat Chee Ave., Kowloon, Hong Kong)
,
Koao L.F.
(Department of Physics, University of the Free State, 9866, Phuthaditjhaba, South Africa)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
115
ページ:
Null
発行年:
2020年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)